Invention Grant
US09324838B2 LDMOS power semiconductor device and manufacturing method of the same
有权
LDMOS功率半导体器件及其制造方法相同
- Patent Title: LDMOS power semiconductor device and manufacturing method of the same
- Patent Title (中): LDMOS功率半导体器件及其制造方法相同
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Application No.: US14151527Application Date: 2014-01-09
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Publication No.: US09324838B2Publication Date: 2016-04-26
- Inventor: Salvatore Cascino , Leonardo Gervasi , Antonello Santangelo
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.R.L.
- Current Assignee: STMicroelectronics S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Priority: ITTO2013A0021 20130111
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/66 ; H01L27/088 ; H01L29/417 ; H01L29/08 ; H01L21/265 ; H01L29/40 ; H01L21/8234 ; H01L29/78 ; H01L29/49 ; H01L29/10 ; H01L29/06
Abstract:
An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.
Public/Granted literature
- US20140197487A1 LDMOS POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2014-07-17
Information query
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