公开(公告)号：US20160087084A1

公开(公告)日：2016-03-24

申请号：US14964130

申请日：2015-12-09

Applicant: STMicroelectronics S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/66 ,  H01L21/265

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

Abstract translation: 方法形成电子半导体器件，其包括具有彼此相对的第一侧和第二侧的主体，并且包括面向第二侧的第一结构区域和在第一结构区域上延伸并面向第一侧面的第二结构区域。 身体区域在第一侧的第二结构区域中延伸。 源极区域在体区内延伸，并且轻掺杂的漏极区域面向身体的第一侧。 在主体区域上形成栅电极。 沟槽电介质区域在与沟槽电介质区域紧邻的第一沟槽导电区域中延伸穿过第二结构区域。 第二沟槽导电区域与身体区域和源区域电接触。 身体上的电接触通过第一结构区域与漏区电接触。

公开(公告)号：US20180212042A1

公开(公告)日：2018-07-26

申请号：US15927646

申请日：2018-03-21

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Salvatore Cascino ,  Leonardo Gervasi

IPC: H01L29/66

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: Methods are directed to forming an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

公开(公告)号：US09484436B2

公开(公告)日：2016-11-01

申请号：US14954635

申请日：2015-11-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/417 ,  H01L27/088

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

公开(公告)号：US09324838B2

公开(公告)日：2016-04-26

申请号：US14151527

申请日：2014-01-09

Applicant: STMicroelectronics S.r.l.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/00 ,  H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/08 ,  H01L21/265 ,  H01L29/40 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.

Abstract translation: 一种电子半导体器件，包括：半导体本体，具有彼此相对的第一侧和第二侧，并且包括面向所述第二侧的第一结构区域和在所述第一结构区域上延伸并面向所述第一侧面的第二结构区域; 身体区域，其在所述第一侧面处在所述第二结构区域中延伸; 源区域，其在身体区域内延伸; 面向半导体主体的第一侧的LDD区; 和栅电极。 所述器件包括：沟槽电介质区域，其延伸穿过所述第二结构区域与所述沟槽电介质区域紧邻的第一沟槽导电区域; 以及与所述主体区域和所述源极区域电接触的第二沟槽导电区域。 半导体本体的第二侧的电触点经由第一结构区域与漏区电接触。

公开(公告)号：US10297677B2

公开(公告)日：2019-05-21

申请号：US15927646

申请日：2018-03-21

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Salvatore Cascino ,  Leonardo Gervasi

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/08 ,  H01L21/265 ,  H01L29/40 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/10 ,  H01L29/06

Abstract: Methods are directed to forming an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

公开(公告)号：US09954079B2

公开(公告)日：2018-04-24

申请号：US14964130

申请日：2015-12-09

Applicant: STMicroelectronics S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/08 ,  H01L21/265 ,  H01L29/40 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

公开(公告)号：US09450076B2

公开(公告)日：2016-09-20

申请号：US14601081

申请日：2015-01-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/76 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/417 ,  H01L27/088

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

Abstract translation: 一种电子半导体器件，包括具有第一结构区域和第二结构区域的半导体本体，其在第一结构区域上延伸并容纳漏极区域; 身体区域，其延伸到第二结构区域; 源区域，其延伸到身体区域中; 以及栅极电极，其延伸在半导体主体上，用于在源极区域和漏极区域之间产生导电沟道。 该器件包括延伸穿过栅电极的一侧上的第二结构区域并与其电绝缘的第一导电沟槽; 以及第二导电沟槽，其延伸穿过所述源极区域，所述主体区域，并且穿过所述栅极电极的相对侧上的所述第二结构区域的右侧，与所述第二结构区域电绝缘并且电耦合到所述主体区域和所述源极区域 。

公开(公告)号：US20150206968A1

公开(公告)日：2015-07-23

申请号：US14601081

申请日：2015-01-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

Abstract translation: 一种电子半导体器件，包括具有第一结构区域和第二结构区域的半导体本体，其在第一结构区域上延伸并容纳漏极区域; 身体区域，其延伸到第二结构区域; 源区域，其延伸到身体区域中; 以及栅极电极，其延伸在半导体主体上，用于在源极区域和漏极区域之间产生导电沟道。 该器件包括延伸穿过栅电极的一侧上的第二结构区域并与其电绝缘的第一导电沟槽; 以及第二导电沟槽，其延伸穿过所述源极区域，所述主体区域，并且穿过所述栅极电极的相对侧上的所述第二结构区域的右侧，与所述第二结构区域电绝缘并且电耦合到所述体区域和所述源极区域 。

公开(公告)号：US20140197487A1

公开(公告)日：2014-07-17

申请号：US14151527

申请日：2014-01-09

Applicant: STMicroelectronics S.r.l.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.

Abstract translation: 一种电子半导体器件，包括：半导体本体，具有彼此相对的第一侧和第二侧，并且包括面向所述第二侧的第一结构区域和在所述第一结构区域上延伸并面向所述第一侧面的第二结构区域; 身体区域，其在所述第一侧面处在所述第二结构区域中延伸; 源区域，其在身体区域内延伸; 面向半导体主体的第一侧的LDD区; 和栅电极。 所述器件包括：沟槽电介质区域，其延伸穿过所述第二结构区域与所述沟槽电介质区域紧邻的第一沟槽导电区域; 以及与所述主体区域和所述源极区域电接触的第二沟槽导电区域。 半导体本体的第二侧的电触点经由第一结构区域与漏区电接触。