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1.发明授权公开(公告)号：US09816954B2
公开(公告)日：2017-11-14
申请号：US14606930
申请日：2015-01-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Antonello Santangelo , Salvatore Cascino , Roberto Modica , Viviana Cerantonio , Maurizio Moschetti , Alessandro Auditore
CPC classification number: G01N27/223 , G01N27/00 , G01N27/22 , G01N27/227 , Y10T29/43
Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.
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2.发明授权公开(公告)号：US09484436B2
公开(公告)日：2016-11-01
申请号：US14954635
申请日：2015-11-30
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Salvatore Cascino , Leonardo Gervasi , Antonello Santangelo
IPC: H01L21/336 , H01L29/66 , H01L29/78 , H01L29/06 , H01L29/10 , H01L29/08 , H01L29/417 , H01L27/088
CPC classification number: H01L29/66681 , H01L27/088 , H01L29/0634 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/1045 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4933 , H01L29/6656 , H01L29/66659 , H01L29/66696 , H01L29/66719 , H01L29/66727 , H01L29/7802 , H01L29/7816 , H01L29/7823 , H01L29/7835
Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.
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公开(公告)号：US09429967B2
公开(公告)日：2016-08-30
申请号：US14617984
申请日：2015-02-10
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Stefania Maria Serena Privitera , Antonello Santangelo
CPC classification number: G05F1/463 , H01C7/006 , H01C7/06 , H01C17/267 , H01L22/14 , H01L22/20 , H01L22/26 , H01L28/24 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/16 , Y10T29/49082
Abstract: An embodiment of an electrically trimmable electronic device, wherein a resistor of electrically modifiable material is formed by a first generally strip-shaped portion and by a second generally strip-shaped portion, which extend transversely with respect to one another and are in direct electrical contact in a crossing area. The first and second portions have respective ends connected to own contact regions, coupled to a current pulse source and are made of the same material or of the same composition of materials starting from a same resistive layer of the material having electrically modifiable resistivity, for example, a phase-change material, such as a Ge—Sb—Te alloy, or polycrystalline silicon, or a metal material used for thin-film resistors. The trimming is performed by supplying a trimming current to the second portion so as to heat the crossing area and modify the resistivity thereof, without flowing longitudinally in the first portion.
Abstract translation: 电可调电子设备的实施例，其中电可修改材料的电阻器由第一大致条形部分和第二大致条形部分形成，第二大致条形部分相对于彼此横向延伸并且直接电接触 在交叉口。 第一和第二部分具有连接到自身接触区域的相应末端，该接触区域与电流脉冲源相连，并且由相同的材料制成，或者由具有电可修改电阻率的材料的相同电阻层开始的材料组成相同。 ，诸如Ge-Sb-Te合金或多晶硅的相变材料或用于薄膜电阻器的金属材料。 通过向第二部分提供修整电流以加热交叉区域并修改其电阻率而不在第一部分中纵向流动来进行修整。
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4.发明授权公开(公告)号：US09324838B2
公开(公告)日：2016-04-26
申请号：US14151527
申请日：2014-01-09
Applicant: STMicroelectronics S.r.l.
Inventor： Salvatore Cascino , Leonardo Gervasi , Antonello Santangelo
IPC: H01L29/00 , H01L29/66 , H01L27/088 , H01L29/417 , H01L29/08 , H01L21/265 , H01L29/40 , H01L21/8234 , H01L29/78 , H01L29/49 , H01L29/10 , H01L29/06
CPC classification number: H01L29/66681 , H01L21/26586 , H01L21/823418 , H01L21/823487 , H01L27/088 , H01L29/063 , H01L29/0634 , H01L29/0878 , H01L29/0886 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/4175 , H01L29/41766 , H01L29/4933 , H01L29/66613 , H01L29/66689 , H01L29/66719 , H01L29/66727 , H01L29/7802 , H01L29/7835
Abstract: An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.
Abstract translation: 一种电子半导体器件，包括：半导体本体，具有彼此相对的第一侧和第二侧，并且包括面向所述第二侧的第一结构区域和在所述第一结构区域上延伸并面向所述第一侧面的第二结构区域; 身体区域，其在所述第一侧面处在所述第二结构区域中延伸; 源区域，其在身体区域内延伸; 面向半导体主体的第一侧的LDD区; 和栅电极。 所述器件包括：沟槽电介质区域，其延伸穿过所述第二结构区域与所述沟槽电介质区域紧邻的第一沟槽导电区域; 以及与所述主体区域和所述源极区域电接触的第二沟槽导电区域。 半导体本体的第二侧的电触点经由第一结构区域与漏区电接触。
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公开(公告)号：US09230720B2
公开(公告)日：2016-01-05
申请号：US13924159
申请日：2013-06-21
Applicant: STMicroelectronics S.r.l.
Inventor： Antonello Santangelo , Stefania Maria Serena Privitera
IPC: H03L5/00 , H01C10/50 , H01C17/232 , H01C17/26 , H01L49/02 , H01L23/522 , H01L21/66
CPC classification number: H01C10/50 , H01C17/232 , H01C17/265 , H01L22/14 , H01L22/20 , H01L23/5228 , H01L28/20 , H01L2924/0002 , H01L2924/00
Abstract: An integrated circuit has a circuit part and a trimmable resistor, the resistance whereof may be modified by Joule effect. The trimmable resistor has first and second connection terminals coupled to the circuit part, and an intermediate terminal that divides the trimmable resistor into two portions. The first and the second connection terminals and the intermediate terminal are coupled to respective pads configured to receive electrical quantities designed to cause, in use, a respective trimming current flow in each portion. In this way, a substantially zero voltage drop is maintained between the first and second connection terminals while current is flowing in the resistor to change an electrical characteristic of the resistor, such as resistance or thermal coefficient.
Abstract translation: 集成电路具有电路部分和可调整电阻，其电阻可以通过焦耳效应进行修改。 可调整电阻器具有耦合到电路部分的第一和第二连接端子以及将可调整电阻器分为两部分的中间端子。 第一和第二连接端子和中间端子耦合到相应的焊盘，其被配置成接收设计成在使用中导致每个部分中的相应修整电流的电量。 以这种方式，在第一和第二连接端子之间保持基本为零的电压降，同时电流在电阻器中流动以改变电阻器的电特性，例如电阻或热系数。
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Patent Agency Ranking
6.发明授权公开(公告)号：US12113103B2
公开(公告)日：2024-10-08
申请号：US18062524
申请日：2022-12-06
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Antonello Santangelo , Giuseppe Longo , Lucio Renna
IPC: H01L29/06 , H01L21/265 , H01L21/266 , H01L29/10 , H01L29/66 , H01L29/78
CPC classification number: H01L29/0634 , H01L21/26513 , H01L21/26586 , H01L21/266 , H01L29/1095 , H01L29/66734 , H01L29/7813
Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.
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公开(公告)号：US11686673B2
公开(公告)日：2023-06-27
申请号：US17217662
申请日：2021-03-30
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Maria Eloisa Castagna , Salvatore Cascino , Viviana Cerantonio , Antonello Santangelo
IPC: G01N21/3504
CPC classification number: G01N21/3504
Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.
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公开(公告)号：US10852263B2
公开(公告)日：2020-12-01
申请号：US16167165
申请日：2018-10-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Salvatore Cascino , Antonello Santangelo
Abstract: A micro-heater element for a MEMS sensor device, envisages, in a single conductive layer: an outer ring, defining inside it a window; a heat-diffusion structure, arranged within the window, separated from the outer ring by a first separation gap; and connection elements, arranged between the heat-diffusion structure and the outer ring, and designed to connect the heat-diffusion structure to the outer ring. The outer ring is designed to dissipate energy upon passage of an electric current, and the heat-diffusion structure is designed to distribute, within the micro-heater element, the heat that is transferred by the outer ring through the connection elements.
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9.发明授权公开(公告)号：US10571421B2
公开(公告)日：2020-02-25
申请号：US15795609
申请日：2017-10-27
Applicant: STMicroelectronics S.R.L.
Inventor： Antonello Santangelo , Salvatore Cascino , Roberto Modica , Viviana Cerantonio , Maurizio Moschetti , Alessandro Auditore
Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.
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10.发明申请公开(公告)号：US20180052132A1
公开(公告)日：2018-02-22
申请号：US15795609
申请日：2017-10-27
Applicant: STMicroelectronics S.R.L.
Inventor： Antonello Santangelo , Salvatore Cascino , Roberto Modica , Viviana Cerantonio , Maurizio Moschetti , Alessandro Auditore
CPC classification number: G01N27/223 , G01N27/00 , G01N27/22 , G01N27/227 , Y10T29/43
Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.
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