Invention Grant
- Patent Title: Semiconductor device and method of forming the same
- Patent Title (中): 半导体器件及其形成方法
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Application No.: US14515783Application Date: 2014-10-16
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Publication No.: US09324859B2Publication Date: 2016-04-26
- Inventor: Heon-Bok Lee , In-Ho Yeo , Sae-Choon Oh , Suk-Kyun Lee , Jung-Ho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2014-0043086 20140410
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L29/78 ; H01L29/66 ; H01L29/40 ; H01L29/423 ; H01L21/306 ; H01L21/308 ; H01L21/3213 ; H01L21/265 ; H01L21/311
Abstract:
A split gate trench field effect transistor includes a gate electrode formed in a trench. A shield gate is formed in a trench below the gate electrode and surrounded by an insulating structure to float the shield electrode.
Public/Granted literature
- US20150295080A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2015-10-15
Information query
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