公开(公告)号：US09324859B2

公开(公告)日：2016-04-26

申请号：US14515783

申请日：2014-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon-Bok Lee ,  In-Ho Yeo ,  Sae-Choon Oh ,  Suk-Kyun Lee ,  Jung-Ho Lee

IPC: H01L21/30 ,  H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/265 ,  H01L21/311

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32133 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66727 ,  H01L29/66734

Abstract: A split gate trench field effect transistor includes a gate electrode formed in a trench. A shield gate is formed in a trench below the gate electrode and surrounded by an insulating structure to float the shield electrode.

Abstract translation: 分离栅沟槽场效应晶体管包括形成在沟槽中的栅电极。 屏蔽栅极形成在栅电极下方的沟槽中并被绝缘结构包围以使屏蔽电极浮动。

公开(公告)号：US20150295080A1

公开(公告)日：2015-10-15

申请号：US14515783

申请日：2014-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon-Bok Lee ,  In-Ho Yeo ,  Sae-Choon Oh ,  Suk-Kyun Lee ,  Jung-Ho Lee

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L21/311 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/265 ,  H01L29/66 ,  H01L21/306

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32133 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66727 ,  H01L29/66734

Abstract: A split gate trench field effect transistor includes a gate electrode formed in a trench. A shield gate is formed in a trench below the gate electrode and surrounded by an insulating structure to float the shield electrode.

Abstract translation: 分离栅沟槽场效应晶体管包括形成在沟槽中的栅电极。 屏蔽栅极形成在栅电极下方的沟槽中并被绝缘结构包围以使屏蔽电极浮动。