发明授权
- 专利标题： Metal oxynitride diode devices
- 专利标题（中）： 金属氮氧化物二极管器件
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申请号： US14544752申请日： 2015-02-12
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公开(公告)号： US09324884B1公开(公告)日： 2016-04-26
- 发明人: Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
- 申请人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; H01L29/861 ; H01L29/24 ; H01L29/45 ; H01L29/06 ; H01L23/31 ; H01L23/29
摘要：
Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.
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