Invention Grant
- Patent Title: Device including two power semiconductor chips and manufacturing thereof
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Application No.: US14617797Application Date: 2015-02-09
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Publication No.: US09331060B2Publication Date: 2016-05-03
- Inventor: Ralf Otremba , Josef Hoeglauer , Joachim Mahler , Johannes Lodermeyer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L23/492 ; H01L21/48 ; H01L23/538 ; H01L21/56 ; H01L25/07 ; H01L23/00 ; H01L21/768 ; H01L23/31

Abstract:
A device includes a first power semiconductor chip with a first contact pad and a second contact pad on a first face and a third contact pad on the second face. The device further includes a second power semiconductor chip with a first contact pad and a second contact pad on a first face and a third contact pad on the second face. The first and second power semiconductor chips are arranged one above another, and the first face of the first power semiconductor chip faces in the direction of the first face of the second power semiconductor chip. In addition, the first power semiconductor chip is located laterally at least partially outside of the outline of the second power semiconductor chip.
Public/Granted literature
- US20150155271A1 Device Including Two Power Semiconductor Chips and Manufacturing Thereof Public/Granted day:2015-06-04
Information query
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