Invention Grant
- Patent Title: Techniques for providing a semiconductor memory device
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Application No.: US14458569Application Date: 2014-08-13
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Publication No.: US09331083B2Publication Date: 2016-05-03
- Inventor: Serguei Okhonin , Viktor Koldiaev , Mikhail Nagoga , Yogesh Luthra
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/108 ; G11C11/39 ; G11C11/403 ; G11C11/404 ; H01L27/102 ; H01L29/78 ; G11C16/10 ; H01L29/66 ; H01L21/768
Abstract:
Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first region and a second region. The apparatus may also include a body region disposed between the first region and the second region and capacitively coupled to a plurality of word lines, wherein each of the plurality of word lines is capacitively coupled to different portions of the body region.
Public/Granted literature
- US20140349450A1 TECHNIQUES FOR PROVIDING A SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2014-11-27
Information query
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