Invention Grant
- Patent Title: Sonos device and method for fabricating the same
- Patent Title (中): Sonos装置及其制造方法
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Application No.: US13914641Application Date: 2013-06-11
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Publication No.: US09331184B2Publication Date: 2016-05-03
- Inventor: Chin-Sheng Yang , Chien-Hung Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/792 ; H01L21/28
Abstract:
A silicon-oxide-nitride-oxide-silicon (SONOS) device is disclosed. The SONOS device includes a substrate; a first oxide layer on the substrate; a silicon-rich trapping layer on the first oxide layer; a nitrogen-containing layer on the silicon-rich trapping layer; a silicon-rich oxide layer on the nitrogen-containing layer; and a polysilicon layer on the silicon-rich oxide layer.
Public/Granted literature
- US20140361359A1 SONOS DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-12-11
Information query
IPC分类:
