Invention Grant
- Patent Title: Reference voltage generating circuit
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Application No.: US14641272Application Date: 2015-03-06
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Publication No.: US09335778B2Publication Date: 2016-05-10
- Inventor: Kenji Furusawa , Mitsuya Fukazawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-011143 20120123
- Main IPC: G05F3/30
- IPC: G05F3/30 ; G05F3/16

Abstract:
A reference voltage generating circuit with extremely low temperature dependence is provided. The reference voltage generating circuit includes a BGR circuit which generates a bandgap reference voltage; a bandgap current generating circuit which generates a bandgap current according to the bandgap reference voltage; a PTAT current generating circuit which generates a current proportional to the absolute temperature; and a linear approximate correction current generating circuit which compares the current generated by the PTAT current generating circuit and the bandgap current to generate a correction current, and the BGR circuit adds, to the bandgap reference voltage, a correction voltage generated based on the correction current.
Public/Granted literature
- US20150177770A1 REFERENCE VOLTAGE GENERATING CIRCUIT Public/Granted day:2015-06-25
Information query
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