Invention Grant
- Patent Title: Storage device and a write method thereof
- Patent Title (中): 存储装置及其写入方法
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Application No.: US14188889Application Date: 2014-02-25
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Publication No.: US09336866B2Publication Date: 2016-05-10
- Inventor: DongHun Kwak , Dongkyo Shim , Kitae Park , Hyun-Wook Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeongg-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeongg-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0076613 20130701
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/56 ; G11C16/04 ; G11C16/10 ; G11C16/34

Abstract:
A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.
Public/Granted literature
- US20150003152A1 STORAGE DEVICE AND A WRITE METHOD THEREOF Public/Granted day:2015-01-01
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