Invention Grant
- Patent Title: Method for repairing damages to sidewalls of an ultra-low dielectric constant film
- Patent Title (中): 修复超低介电常数膜侧壁损坏的方法
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Application No.: US14758307Application Date: 2014-08-11
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Publication No.: US09337017B2Publication Date: 2016-05-10
- Inventor: Shaohai Zeng , Qingyun Zuo , Ming Li
- Applicant: Shaohai Zeng , Qingyun Zuo , Ming Li
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI IC R&D CENTER CO., LTD
- Current Assignee: SHANGHAI IC R&D CENTER CO., LTD
- Current Assignee Address: CN Shanghai
- Priority: CN201310525014 20131030
- International Application: PCT/CN2014/084099 WO 20140811
- International Announcement: WO2015/062331 WO 20150507
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/302 ; H01L21/768 ; H01L21/3105
Abstract:
A method for repairing damages to sidewalls of an ultra-low dielectric constant film is disclosed by the present invention comprises the following steps: depositing an ultra-low dielectric constant film on an semiconductor substrate; dry-etching the ultra-low dielectric constant film to form a sidewall structure thereof; performing wet cleaning by using a chemical agent containing an unsaturated hydrocarbon having —O—C(Re)x; and performing ultraviolet curing. The present invention can restore pores size and porosity of the ultra-low dielectric constant film, and to keep effective dielectric constant to a minimum.
Public/Granted literature
- US20150340227A1 METHOD FOR REPAIRING DAMAGES TO SIDEWALLS OF AN ULTRA-LOW DIELECTRIC CONSTANT FILM Public/Granted day:2015-11-26
Information query
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