Invention Grant
- Patent Title: Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate
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Application No.: US14682820Application Date: 2015-04-09
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Publication No.: US09337029B2Publication Date: 2016-05-10
- Inventor: Xianyu Wenxu , Yeon-hee Kim , Chang-youl Moon , Yong-young Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0117914 20121023
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02 ; H01L29/20 ; H01L21/306 ; H01L21/308
Abstract:
A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
Public/Granted literature
- US20150214037A1 STRUCTURE INCLUDING GALLIUM NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING THE GALLIUM NITRIDE SUBSTRATE Public/Granted day:2015-07-30
Information query
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