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1.发明授权公开(公告)号：US09029860B2
公开(公告)日：2015-05-12
申请号：US13848281
申请日：2013-03-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xianyu Wenxu , Yeon-hee Kim , Chang-youl Moon , Yong-young Park
CPC classification number: H01L21/0254 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02658 , H01L21/02667 , H01L21/30604 , H01L21/3081 , H01L29/2003
Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
Abstract translation: 一种结构包括硅衬底，硅衬底上的多个硅棒，多个硅棒上的硅层，以及硅层上的GaN衬底。
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2.发明申请STRUCTURE INCLUDING GALLIUM NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING THE GALLIUM NITRIDE SUBSTRATE 审中-公开包括氮化镓衬底的结构和制造氮化镓衬底的方法公开(公告)号：US20150214037A1
公开(公告)日：2015-07-30
申请号：US14682820
申请日：2015-04-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xianyu WENXU , Yeon-hee Kim , Chang-youl Moon , Yong-young Park
IPC: H01L21/02 , H01L21/308 , H01L29/20 , H01L21/306
CPC classification number: H01L21/0254 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02658 , H01L21/02667 , H01L21/30604 , H01L21/3081 , H01L29/2003
Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
Abstract translation: 一种结构包括硅衬底，硅衬底上的多个硅棒，多个硅棒上的硅层，以及硅层上的GaN衬底。
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公开(公告)号：US09337029B2
公开(公告)日：2016-05-10
申请号：US14682820
申请日：2015-04-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xianyu Wenxu , Yeon-hee Kim , Chang-youl Moon , Yong-young Park
IPC: H01L21/302 , H01L21/02 , H01L29/20 , H01L21/306 , H01L21/308
CPC classification number: H01L21/0254 , H01L21/02164 , H01L21/02238 , H01L21/02255 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02658 , H01L21/02667 , H01L21/30604 , H01L21/3081 , H01L29/2003
Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.
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