Invention Grant
- Patent Title: Methods of forming a semiconductor circuit element and semiconductor circuit element
- Patent Title (中): 形成半导体电路元件和半导体电路元件的方法
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Application No.: US14458718Application Date: 2014-08-13
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Publication No.: US09337045B2Publication Date: 2016-05-10
- Inventor: Carsten Grass , Peter Baars
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; H01L29/51 ; H01L21/8238 ; H01L27/092

Abstract:
The present disclosure provides a method of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element is formed on the basis of a replacement gate process replacing a dummy gate structure of a semiconductor device of the semiconductor circuit element by a gate oxide structure and a gate electrode material, wherein the gate oxide structure comprises a high-k material that is in the ferroelectric phase. In some illustrative embodiments herein, a semiconductor device is provided, the semiconductor device having a gate structure disposed over an active region of a semiconductor substrate. Herein, the gate structure comprises a spacer structure and a dummy gate structure which is replaced by a gate oxide structure and a gate electrode material, wherein the gate oxide structure comprises a ferroelectric high-k material.
Public/Granted literature
- US20160049302A1 METHOD OF FORMING A SEMICONDUCTOR CIRCUIT ELEMENT AND SEMICONDUCTOR CIRCUIT ELEMENT Public/Granted day:2016-02-18
Information query
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