Invention Grant
- Patent Title: Shallow trench isolation in bulk substrate
- Patent Title (中): 散装衬底中的浅沟槽隔离
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Application No.: US14549559Application Date: 2014-11-21
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Publication No.: US09337260B2Publication Date: 2016-05-10
- Inventor: En-Chiuan Liou , Po-Chao Tsao , Chia-Jui Liang , Jia-Rong Wu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; H01L21/762 ; H01L21/8234
Abstract:
The semiconductor structure includes a plurality of first insulators in a substrate, a common insulating layer surrounding the sidewall and the bottom of said first insulators in said substrate, and suspended portions of said substrate on said common insulating layer.
Public/Granted literature
- US20150097248A1 SHALLOW TRENCH ISOLATION Public/Granted day:2015-04-09
Information query
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