Invention Grant
- Patent Title: Planar semiconductor growth on III-V material
-
Application No.: US14803910Application Date: 2015-07-20
-
Publication No.: US09337281B2Publication Date: 2016-05-10
- Inventor: Cheng-Wei Cheng , Jack O. Chu , Devendra K. Sadana , Kuen-Ting Shiu , Yanning Sun
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/267 ; H01L29/772 ; H01L29/45 ; H01L21/02 ; H01L21/285 ; H01L21/322 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V monocrystalline layer and the germanium surface layer from a material selected to provide stronger nucleation bonding between the interlayer and the germanium surface layer than nucleation bonding that would be achievable directly between the III-V monocrystalline layer and the germanium surface layer such that a continuous, relatively defect-free germanium surface layer is provided.
Public/Granted literature
- US20150325682A1 PLANAR SEMICONDUCTOR GROWTH ON III-V MATERIAL Public/Granted day:2015-11-12
Information query
IPC分类:
