Invention Grant
US09337323B2 Trench isolation for bipolar junction transistors in BiCMOS technology
有权
BiCMOS技术中双极结晶体管的沟槽隔离
- Patent Title: Trench isolation for bipolar junction transistors in BiCMOS technology
- Patent Title (中): BiCMOS技术中双极结晶体管的沟槽隔离
-
Application No.: US14496430Application Date: 2014-09-25
-
Publication No.: US09337323B2Publication Date: 2016-05-10
- Inventor: James S. Dunn , Qizhi Liu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony J. Canale
- Main IPC: H01L29/732
- IPC: H01L29/732 ; G06F17/50 ; H01L29/66 ; H01L29/737 ; H01L29/06 ; H01L29/08 ; H01L29/10
Abstract:
Device structures and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region. A collector is formed in the device region, and a second isolation structure is formed in the device region. The second isolation structure defines a boundary for the collector. The second isolation structure is laterally positioned relative to the first isolation structure to define a section of the device region between the first and second isolation structures.
Public/Granted literature
- US20150048478A1 TRENCH ISOLATION FOR BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY Public/Granted day:2015-02-19
Information query
IPC分类:
