Invention Grant
US09337333B2 Transistors with an extension region having strips of differing conductivity type
有权
具有延伸区域的晶体管具有不同导电类型的条带
- Patent Title: Transistors with an extension region having strips of differing conductivity type
- Patent Title (中): 具有延伸区域的晶体管具有不同导电类型的条带
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Application No.: US14448198Application Date: 2014-07-31
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Publication No.: US09337333B2Publication Date: 2016-05-10
- Inventor: Michael Smith , Vladimir Mikhalev , Puneet Sharma , Zia Alan Shafi , Henry Jim Fulford
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/266 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L27/105
Abstract:
A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.
Public/Granted literature
- US20140339648A1 TRANSISTORS WITH AN EXTENSION REGION HAVING STRIPS OF DIFFERING CONDUCTIVITY TYPE Public/Granted day:2014-11-20
Information query
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