公开(公告)号：US20140339648A1

公开(公告)日：2014-11-20

申请号：US14448198

申请日：2014-07-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael Smith ,  Vladimir Mikhalev ,  Puneet Sharma ,  Zia Alan Shafi ,  Henry Jim Fulford

IPC: H01L29/78

CPC classification number: H01L29/7833 ,  H01L21/266 ,  H01L27/105 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/423 ,  H01L29/6659

Abstract: A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.

Abstract translation: 晶体管包括在具有第一导电类型的半导体上的栅极电介质，栅极电介质上的控制栅极，在具有第一导电类型的半导体中具有第二导电类型的源极和漏极区域，以及具有第二导电类型的条带 半导体具有第一导电类型并且插入在控制栅极和源极和漏极区域中的至少一个之间。

公开(公告)号：US09337333B2

公开(公告)日：2016-05-10

申请号：US14448198

申请日：2014-07-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael Smith ,  Vladimir Mikhalev ,  Puneet Sharma ,  Zia Alan Shafi ,  Henry Jim Fulford

IPC: H01L29/78 ,  H01L21/266 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L27/105

CPC classification number: H01L29/7833 ,  H01L21/266 ,  H01L27/105 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/423 ,  H01L29/6659

Abstract: A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.

Abstract translation: 晶体管包括在具有第一导电类型的半导体上的栅极电介质，栅极电介质上的控制栅极，在具有第一导电类型的半导体中具有第二导电类型的源极和漏极区域，以及具有第二导电类型的条带 半导体具有第一导电类型并且插入在控制栅极和源极和漏极区域中的至少一个之间。