Invention Grant
- Patent Title: Bus circuits for memory devices
- Patent Title (中): 存储器总线电路
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Application No.: US14479020Application Date: 2014-09-05
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Publication No.: US09343119B2Publication Date: 2016-05-17
- Inventor: Nicolas L. Irizarry , Balaji Srinivasan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C5/14 ; G11C13/00 ; G11C16/30

Abstract:
Embodiments of bus circuits and related techniques are disclosed herein. In some embodiments, a bus circuit may include: a source follower arrangement, including a first transistor and a second transistor, coupled between a supply voltage and an access line of a memory cell, wherein the first transistor and the second transistor each have a gate terminal and wherein the access line is a bit line or a word line; a capacitor having a first terminal coupled to the gate terminal of the first transistor and having a second terminal coupled to a reference voltage; and a switch coupled between the first terminal of the capacitor and a voltage regulator. Other embodiments may be disclosed and/or claimed.
Public/Granted literature
- US20160071553A1 BUS CIRCUITS FOR MEMORY DEVICES Public/Granted day:2016-03-10
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