Invention Grant
US09343151B1 Resistive random access memory and method of resetting a resistive random access memory
有权
电阻随机存取存储器和复位电阻随机存取存储器的方法
- Patent Title: Resistive random access memory and method of resetting a resistive random access memory
- Patent Title (中): 电阻随机存取存储器和复位电阻随机存取存储器的方法
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Application No.: US14593075Application Date: 2015-01-09
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Publication No.: US09343151B1Publication Date: 2016-05-17
- Inventor: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/36 ; G11C13/00
Abstract:
According to another embodiment, a method of a reset operation for a RRAM is provided. The method includes the following operations: providing a first voltage to the dielectric side electrode of the resistor; and providing a second voltage to a gate of the transistor, wherein the first voltage in a second loop is lower than that in a first loop, and the second voltage in the second loop is higher than that in the first loop.
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