Contact formation in Ge-containing semiconductor devices

Invention Grant

US09343329B2 Contact formation in Ge-containing semiconductor devices 有权

Title translation: 含Ge半导体器件中的接触层形成

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Patent Title: Contact formation in Ge-containing semiconductor devices
Patent Title (中): 含Ge半导体器件中的接触层形成
Application No.: US14620766

Application Date: 2015-02-12
Publication No.: US09343329B2

Publication Date: 2016-05-17
Inventor: Alexey Milenin , Liesbeth Witters
Applicant: IMEC VZW
Applicant Address: BE Leuven
Assignee: IMEC VZW
Current Assignee: IMEC VZW
Current Assignee Address: BE Leuven
Agency: McDonnell Boehnen Hulbert & Berghoff LLP
Priority: EP14154933 20140213
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/311 ; H01L29/16 ; H01L29/78 ; H01L29/66 ; H01L21/285 ; H01L29/417 ; H01L29/45

Contact formation in Ge-containing semiconductor devices

Abstract:

A process for creating a contact on a Ge-containing contact region of a semiconductor structure, said process comprising the steps of: providing said semiconductor structure comprising: (i) a Ge-containing contact region, (ii) optionally, a SiO2 layer coating said Ge-containing contact region, (iii) a Si3N4 layer coating said SiO2 layer if present or said Ge-containing contact region; etching selectively the Si3N4 layer by means of an inductively coupled plasma, thereby exposing the underlying SiO2 layer if present or the Ge-containing contact region; etching selectively the SiO2 layer if present, thereby exposing the SiGe:B contact region; and creating said contact on said Ge-containing contact region.

Abstract(Chinese):

一种用于在半导体结构的含锗接触区域上形成接触的方法，所述方法包括以下步骤：提供所述半导体结构，包括：（i）含Ge接触区域，（ii）任选的SiO 2层涂层所述含Ge接触区域，（iii）涂覆所述SiO 2层（如果存在）或所述含Ge接触区域的Si 3 N 4层; 通过电感耦合等离子体选择性地蚀刻Si 3 N 4层，从而暴露下面的SiO 2层（如果存在）或含Ge接触区域; 选择性地蚀刻SiO 2层（如果存在），从而暴露SiGe：B接触区域; 以及在所述含Ge接触区域上产生所述接触。

Public/Granted literature

US20150228502A1 Contact Formation in Ge-Containing Semiconductor Devices Public/Granted day:2015-08-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）