Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US14583831Application Date: 2014-12-29
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Publication No.: US09343660B2Publication Date: 2016-05-17
- Inventor: Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2010-0037017 20100421
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; B82Y25/00 ; H01F10/32 ; H01L43/02 ; H01L27/22 ; H01F10/12
Abstract:
A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Public/Granted literature
- US20150115380A1 MAGNETIC MEMORY DEVICE Public/Granted day:2015-04-30
Information query
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