公开(公告)号：US08847341B2

公开(公告)日：2014-09-30

申请号：US13926048

申请日：2013-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/02 ,  H01F10/32 ,  B82Y25/00 ,  H01L43/08 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层，第一垂直磁性层和第二垂直磁性层之间的隧道势垒层，以及在第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。

公开(公告)号：US09343660B2

公开(公告)日：2016-05-17

申请号：US14583831

申请日：2014-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/08 ,  H01L43/10 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

公开(公告)号：US09048417B2

公开(公告)日：2015-06-02

申请号：US14464835

申请日：2014-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jangeun Lee ,  Sechung Oh ,  Jeahyoung Lee ,  Woojin Kim ,  Junho Jeong ,  Woo Chang Lim

IPC: H01L43/08 ,  H01L43/10 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  H01F10/12

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Abstract translation: 提供磁存储器件。 所述磁存储器件包括：衬底上的第一垂直磁性层和第二垂直磁性层，所述第一垂直磁性层和所述第二垂直磁性层之间的隧道势垒层，以及位于所述第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。