发明授权
- 专利标题： Pattern formation method
- 专利标题（中）： 图案形成方法
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申请号： US14576435申请日： 2014-12-19
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公开(公告)号： US09349585B2公开(公告)日： 2016-05-24
- 发明人: Sonoe Nakaoka , Kentaro Matsunaga , Eiji Yoneda
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2014-175888 20140829
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; H01L21/027 ; H01L21/02 ; H01L21/311 ; G03F1/00 ; G03F7/20 ; G03F7/38
摘要：
According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns.
公开/授权文献
- US20160064216A1 PATTERN FORMATION METHOD 公开/授权日：2016-03-03
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