Invention Grant
US09349733B2 Gate structure having spacer with flat top surface and method for forming the same
有权
具有平顶表面的间隔件的门结构及其形成方法
- Patent Title: Gate structure having spacer with flat top surface and method for forming the same
- Patent Title (中): 具有平顶表面的间隔件的门结构及其形成方法
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Application No.: US14318079Application Date: 2014-06-27
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Publication No.: US09349733B2Publication Date: 2016-05-24
- Inventor: Jen-Chi Chang , Wen-Long Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/78 ; H01L29/51 ; H01L29/66 ; H01L21/8238 ; H01L21/311
Abstract:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a first gate structure formed over a substrate. The semiconductor structure includes a first spacer formed on a sidewall of the first gate structure. In addition, a top surface of the first spacer is parallel to a top surface of the substrate.
Public/Granted literature
- US20150380406A1 GATE STRUCTURE HAVING SPACER WITH FLAT TOP SURFACE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-12-31
Information query
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