Methods for replacing gate sidewall materials with a low-k spacer

Invention Grant

US09349835B2 Methods for replacing gate sidewall materials with a low-k spacer 有权

Title translation: 用低k间隔物代替栅极侧壁材料的方法

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Patent Title: Methods for replacing gate sidewall materials with a low-k spacer
Patent Title (中): 用低k间隔物代替栅极侧壁材料的方法
Application No.: US14027720

Application Date: 2013-09-16
Publication No.: US09349835B2

Publication Date: 2016-05-24
Inventor: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Charan Veera Venkata Satya Surisetty
Applicant: GLOBALFOUNDRIES Inc.
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES INC.
Current Assignee: GLOBALFOUNDRIES INC.
Current Assignee Address: KY Grand Cayman
Agency: Roberts Mlotkowski Safran & Cole, P.C.
Agent Yuanmin Cai; Andrew M. Calderon
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L29/66 ; H01L29/49 ; H01L29/417 ; H01L29/51

Methods for replacing gate sidewall materials with a low-k spacer

Abstract:

A semiconductor device includes gates and a low-k spacer. The low-k spacer includes low-k spacer portions formed upon the gate sidewalls and a low-k spacer portion formed upon a top surface of an underlying substrate adjacent to the gates. When a structure has previously undergone a gate processing fabrication stage, the gates and at least a portion of the top surface of the substrate may be exposed thereby allowing the formation of the low-k spacer. This exposure may include removing any original gate spacers, removing an original liner formed upon the original spacers, and removing any original fill material formed upon the liner.

Abstract(Chinese):

半导体器件包括栅极和低k间隔物。低k间隔物包括形成在栅极侧壁上的低k隔离部分和形成在与栅极相邻的下面基底的顶表面上的低k隔离部分。当结构先前已经进行了栅极处理制造阶段时，可以暴露栅极和衬底顶表面的至少一部分，从而允许形成低k间隔物。该曝光可以包括去除任何原始的栅极间隔物，去除形成在原始间隔物上的原始衬垫，以及去除在衬垫上形成的任何原始填充材料。

Public/Granted literature

US20150076606A1 SEMICONDUCTOR DEVICE WITH LOW-K SPACER Public/Granted day:2015-03-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺