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    INTEGRATED CIRCUITS HAVING GATE CAP PROTECTION AND METHODS OF FORMING THE SAME
    1.
    发明申请
    INTEGRATED CIRCUITS HAVING GATE CAP PROTECTION AND METHODS OF FORMING THE SAME 有权
    具有门盖保护的集成电路及其形成方法

    公开(公告)号：US20150206844A1

    公开(公告)日：2015-07-23

    申请号：US14159944

    申请日：2014-01-21

    Applicant: International Business Machines Corporation ,  Globalfoundries, Inc.

    Inventor： Daniel Thanh Khae Pham ,  Xiuyu Cai ,  Bala Subramanian Pranatharthi Haran ,  Charan Veera Venkata Satya Surisetty ,  Jin Wook Lee ,  Shom Ponoth ,  David V. Horak

    IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L27/06

    CPC classification number: H01L21/76816 ,  H01L21/28247 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76877 ,  H01L21/76897 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Integrated circuits and methods of forming integrated circuits are provided. An integrated circuit includes a gate electrode structure overlying a base substrate. The gate electrode structure includes a gate electrode, with a cap disposed over the gate electrode and sidewall spacers disposed adjacent to sidewalls of the gate electrode structure. A source and drain region are formed in the base substrate aligned with the gate electrode structure. A first dielectric layer is disposed adjacent to the sidewall spacers. The sidewall spacers and the cap have recessed surfaces below a top surface of the first dielectric layer, and a protecting layer is disposed over the recessed surfaces. A second dielectric layer is disposed over the first dielectric layer and the protecting layer. Electrical interconnects are disposed through the first dielectric layer and the second dielectric layer, and the electrical interconnects are in electrical communication with the respective source and drain regions.

    Abstract translation: 提供了形成集成电路的集成电路和方法。 集成电路包括覆盖基底的栅电极结构。 栅极电极结构包括栅电极，栅极设置在栅电极上，侧壁间隔件邻近栅电极结构的侧壁设置。 源极和漏极区域形成在与栅电极结构对准的基底衬底中。 第一电介质层设置成与侧壁间隔物相邻。 侧壁间隔件和盖在第一电介质层的顶表面下方具有凹陷表面，并且保护层设置在凹入表面之上。 第二电介质层设置在第一电介质层和保护层之上。 电互连通过第一介电层和第二介电层设置，并且电互连与相应的源区和漏区电连通。

    Methods of forming replacement gate structures on semiconductor devices and the resulting device
    2.
    发明授权
    Methods of forming replacement gate structures on semiconductor devices and the resulting device 有权
    在半导体器件上形成替代栅极结构的方法和所得到的器件

    公开(公告)号：US08772101B2

    公开(公告)日：2014-07-08

    申请号：US13671940

    申请日：2012-11-08

    Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

    Inventor： Ruilong Xie ,  Ponoth Shom ,  Cho Jin ,  Charan Veera Venkata Satya Surisetty

    IPC: H01L21/8238

    CPC classification number: H01L29/66545 ,  H01L29/6653 ,  H01L29/78

    Abstract: One method includes forming first sidewall spacers adjacent opposite sides of a sacrificial gate structure and a gate cap layer, removing the gate cap layer and a portion of the first sidewall spacers to define reduced-height first sidewall spacers, forming second sidewall spacers, removing the sacrificial gate structure to thereby define a gate cavity, whereby a portion of the gate cavity is laterally defined by the second sidewall spacers, and forming a replacement gate structure in the gate cavity, wherein at least a first portion of the replacement gate structure is positioned between the second sidewall spacers. A device includes a gate structure positioned above the substrate between first and second spaced-apart portions of a layer of insulating material and a plurality of first sidewall spacers, each of which are positioned between the gate structure and on one of the first and second portions of the layer of insulating material.

    Abstract translation: 一种方法包括在牺牲栅极结构和栅极盖层的相对侧面上形成第一侧壁间隔物，去除栅极覆盖层和第一侧壁间隔物的一部分以限定缩小的第一侧壁间隔物，形成第二侧壁间隔物， 牺牲栅极结构，从而限定栅极腔，由此栅极空腔的一部分由第二侧壁间隔物横向地限定，并且在栅极腔中形成替换栅极结构，其中替换栅极结构的至少第一部分被定位 在第二侧壁间隔件之间。 一种器件包括位于绝缘材料层的第一和第二间隔部分之间的衬底上方的栅极结构和多个第一侧壁间隔件，每个第一侧壁间隔件位于栅极结构之间并且在第一和第二部分之一上 的绝缘材料层。

    Integrated circuits having gate cap protection and methods of forming the same
    5.
    发明授权
    Integrated circuits having gate cap protection and methods of forming the same 有权
    具有栅极盖保护的集成电路及其形成方法

    公开(公告)号：US09269611B2

    公开(公告)日：2016-02-23

    申请号：US14159944

    申请日：2014-01-21

    Applicant: GLOBALFOUNDRIES, Inc. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Daniel Thanh Khae Pham ,  Xiuyu Cai ,  Bala Subramanian Pranatharthi Haran ,  Charan Veera Venkata Satya Surisetty ,  Jin Wook Lee ,  Shom Ponoth ,  David V. Horak

    IPC: H01L29/78 ,  H01L21/768

    CPC classification number: H01L21/76816 ,  H01L21/28247 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76877 ,  H01L21/76897 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Integrated circuits and methods of forming integrated circuits are provided. An integrated circuit includes a gate electrode structure overlying a base substrate. The gate electrode structure includes a gate electrode, with a cap disposed over the gate electrode and sidewall spacers disposed adjacent to sidewalls of the gate electrode structure. A source and drain region are formed in the base substrate aligned with the gate electrode structure. A first dielectric layer is disposed adjacent to the sidewall spacers. The sidewall spacers and the cap have recessed surfaces below a top surface of the first dielectric layer, and a protecting layer is disposed over the recessed surfaces. A second dielectric layer is disposed over the first dielectric layer and the protecting layer. Electrical interconnects are disposed through the first dielectric layer and the second dielectric layer, and the electrical interconnects are in electrical communication with the respective source and drain regions.

    Abstract translation: 提供了形成集成电路的集成电路和方法。 集成电路包括覆盖基底的栅电极结构。 栅极电极结构包括栅电极，栅极设置在栅电极上，侧壁间隔件邻近栅电极结构的侧壁设置。 源极和漏极区域形成在与栅电极结构对准的基底衬底中。 第一电介质层设置成与侧壁间隔物相邻。 侧壁间隔件和盖在第一电介质层的顶表面下方具有凹陷表面，并且保护层设置在凹入表面之上。 第二电介质层设置在第一电介质层和保护层之上。 电互连通过第一介电层和第二介电层设置，并且电互连与相应的源区和漏区电连通。

    METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON SEMICONDUCTOR DEVICES AND THE RESULTING DEVICE
    6.
    发明申请
    METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON SEMICONDUCTOR DEVICES AND THE RESULTING DEVICE 有权
    形成半导体器件和结果器件替代门结构的方法

    公开(公告)号：US20140124841A1

    公开(公告)日：2014-05-08

    申请号：US13671940

    申请日：2012-11-08

    Applicant: GLOBALFOUNDRIES INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Ruilong Xie ,  Ponoth Shom ,  Cho Jin ,  Charan Veera Venkata Satya Surisetty

    IPC: H01L29/423 ,  H01L21/28

    CPC classification number: H01L29/66545 ,  H01L29/6653 ,  H01L29/78

    Abstract: One method includes forming first sidewall spacers adjacent opposite sides of a sacrificial gate structure and a gate cap layer, removing the gate cap layer and a portion of the first sidewall spacers to define reduced-height first sidewall spacers, forming second sidewall spacers, removing the sacrificial gate structure to thereby define a gate cavity, whereby a portion of the gate cavity is laterally defined by the second sidewall spacers, and forming a replacement gate structure in the gate cavity, wherein at least a first portion of the replacement gate structure is positioned between the second sidewall spacers. A device includes a gate structure positioned above the substrate between first and second spaced-apart portions of a layer of insulating material and a plurality of first sidewall spacers, each of which are positioned between the gate structure and on one of the first and second portions of the layer of insulating material.

    Abstract translation: 一种方法包括在牺牲栅极结构和栅极盖层的相对侧面上形成第一侧壁间隔物，去除栅极覆盖层和第一侧壁间隔物的一部分以限定缩小的第一侧壁间隔物，形成第二侧壁间隔物， 牺牲栅极结构，从而限定栅极腔，由此栅极空腔的一部分由第二侧壁间隔物横向地限定，并且在栅极腔中形成替换栅极结构，其中替换栅极结构的至少第一部分被定位 在第二侧壁间隔件之间。 一种器件包括位于绝缘材料层的第一和第二间隔部分之间的衬底上方的栅极结构和多个第一侧壁间隔件，每个第一侧壁间隔件位于栅极结构之间并且在第一和第二部分之一上 的绝缘材料层。

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