Invention Grant
US09349939B2 Etch-resistant protective coating for a magnetic tunnel junction device
有权
用于磁性隧道连接装置的耐蚀刻保护涂层
- Patent Title: Etch-resistant protective coating for a magnetic tunnel junction device
- Patent Title (中): 用于磁性隧道连接装置的耐蚀刻保护涂层
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Application No.: US14286518Application Date: 2014-05-23
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Publication No.: US09349939B2Publication Date: 2016-05-24
- Inventor: Yu Lu , Chando Park , Wei-Chuan Chen
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/12 ; H01L27/22
Abstract:
A method of forming a magnetic tunnel junction (MTJ) device includes forming a spacer on an exposed side portion of the MTJ device. The method further includes forming an etch-resistant protective coating associated with the MTJ device. The etch-resistant protective coating provides greater etch resistance than the spacer.
Public/Granted literature
- US20150340593A1 ETCH-RESISTANT PROTECTIVE COATING FOR A MAGNETIC TUNNEL JUNCTION DEVICE Public/Granted day:2015-11-26
Information query
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