Invention Grant
US09349965B2 Photoelectric conversion material, film containing the material, photoelectric conversion device, method for preparing photoelectric conversion device, method for using photoelectric conversion device, photosensor and imaging device
有权
光电转换材料，含有该材料的薄膜，光电转换装置，光电转换装置的制备方法，使用光电转换装置的方法，光电传感器和成像装置
- Patent Title: Photoelectric conversion material, film containing the material, photoelectric conversion device, method for preparing photoelectric conversion device, method for using photoelectric conversion device, photosensor and imaging device
- Patent Title (中): 光电转换材料，含有该材料的薄膜，光电转换装置，光电转换装置的制备方法，使用光电转换装置的方法，光电传感器和成像装置
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Application No.: US13789537Application Date: 2013-03-07
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Publication No.: US09349965B2Publication Date: 2016-05-24
- Inventor: Katsuyuki Yofu , Kimiatsu Nomura , Eiji Fukuzaki , Yuki Hirai , Mitsumasa Hamano , Tetsuro Mitsui
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM CORPORATION
- Current Assignee: FUJIFILM CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2010-201491 20100908; JP2011-084012 20110405
- Main IPC: C07D221/18
- IPC: C07D221/18 ; C07D221/22 ; C07D223/14 ; H01L51/00 ; C07D219/02 ; C07D455/03 ; C07D455/06 ; C07D471/14 ; C07D471/16 ; C07C225/22 ; H01L51/42
Abstract:
There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol−1·l·cm−1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.
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