公开(公告)号：US11209732B2

公开(公告)日：2021-12-28

申请号：US15976515

申请日：2018-05-10

Applicant: FUJIFILM Corporation

Inventor： Yuki Hirai ,  Daisuke Sasaki ,  Yoshihiro Jimbo

IPC: G03F7/00 ,  C08L101/00 ,  C09D133/16 ,  G02B5/00 ,  G02B5/20 ,  G03F7/038 ,  G03F7/039 ,  H01L27/14 ,  H01L27/146 ,  C07D333/36 ,  C07D519/00 ,  C09D4/00 ,  C07D277/42 ,  C07D333/22 ,  C08K5/45

Abstract: A near infrared absorbing composition includes: a squarylium compound represented by the following Formula (1) and having an absorption maximum of 700 nm or longer; and a resin. In Formula (1), Ar1 and Ar2 each independently represent a divalent conjugated group which has a heteroaryl ring having a chalcogen atom, and R1 to R4 each independently represent a hydrogen atom or a substituent. The film and the infrared cut filter are formed of the near infrared absorbing composition. The solid image pickup element includes the infrared cut filter.

公开(公告)号：US09954172B2

公开(公告)日：2018-04-24

申请号：US15593337

申请日：2017-05-12

Applicant: FUJIFILM CORPORATION

Inventor： Yuki Hirai ,  Kensuke Masui

IPC: H01L51/00 ,  C07D495/22 ,  C08G61/12 ,  H01L51/05

CPC classification number: H01L51/0036 ,  C07D495/22 ,  C08G61/12 ,  C08G61/124 ,  C08G61/126 ,  C08G2261/12 ,  C08G2261/1412 ,  C08G2261/18 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/411 ,  C08G2261/51 ,  C08G2261/64 ,  C08G2261/92 ,  C08K5/45 ,  C08L101/00 ,  H01L29/786 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0074 ,  H01L51/05 ,  H01L51/0545 ,  H01L51/0566

Abstract: An object is to provide an organic semiconductor element having excellent carrier mobility and heat resistance of a semiconductor active layer, an organic semiconductor composition for obtaining this element, an organic semiconductor film, and a method of manufacturing an organic semiconductor element in which the composition is used, and another object is to provide a compound and an oligomer or a polymer that are suitably used in the organic semiconductor element, the organic semiconductor composition, the organic semiconductor film, and the method of manufacturing an organic semiconductor element.The organic semiconductor element of the present invention includes a compound represented by Formula 1 below in a semiconductor active layer. In Formula 1, X represents a chalcogen atom, p and q each independently represent an integer of 0 to 2, and R1 and R2 each independently represent a halogen atom or a group represented by Formula W below.

公开(公告)号：US11209582B2

公开(公告)日：2021-12-28

申请号：US16108290

申请日：2018-08-22

Applicant: FUJIFILM Corporation

Inventor： Kyohei Arayama ,  Takuya Tsuruta ,  Yuki Hirai ,  Kazutaka Takahashi ,  Tokihiko Matsumura ,  Suguru Samejima

IPC: G02B5/20 ,  G02B5/22 ,  C08F222/28 ,  C09B67/22 ,  G03F7/032 ,  G03F7/00 ,  G03F7/028 ,  C08F290/12 ,  G02F1/1335 ,  H01L27/146

Abstract: Provided are a composition that has excellent pigment dispersibility without affecting the color of a pigment in a visible range, a curable composition, a cured film, a near infrared cut filter, an infrared transmitting filter; a solid image pickup element, an infrared sensor, and a camera module. The composition includes: a pigment; a pigment derivative that includes a compound represented by Formula (1); and a solvent, in which R1 and R2 represent an aryl group or the like, R3 to R6 represent a cyano group, a heteroaryl group, or the like, R7 and R8 each independently represent —BR9R10 or the like, R9 and R10 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an aryl group, a heteroaryl group, an alkoxy group, an aryloxy group, or a heteroaryloxy group, L represents a single bond or a linking group, X represents an acidic group or the like, m represents an integer of 1 to 10, and n represents an integer of 1 to 10.

公开(公告)号：US10953668B2

公开(公告)日：2021-03-23

申请号：US16275254

申请日：2019-02-13

Applicant: FUJIFILM CORPORATION

Inventor： Yuki Hirai ,  Akihiro Hara ,  Daisuke Sasaki ,  Yoshihiro Jimbo

IPC: B41J11/00 ,  C09D11/322 ,  B41M5/00 ,  C09B23/01 ,  C09D11/033 ,  C09D11/037 ,  C09D11/328

Abstract: Provided is an ink jet recording ink including: a colorant represented by the following Formula 1, in which an absorption maximum of a dry material of the ink jet recording ink is 700 nm to 1000 nm.

公开(公告)号：US09653686B2

公开(公告)日：2017-05-16

申请号：US14993371

申请日：2016-01-12

Applicant: FUJIFILM Corporation

Inventor： Koji Takaku ,  Akihiro Kaneko ,  Hiroki Sugiura ,  Kensuke Masui ,  Yasunori Yonekuta ,  Yuki Hirai ,  Masashi Koyanagi

IPC: C08G59/00 ,  H01L51/00 ,  C08G61/12 ,  C07C49/697 ,  C08G61/02 ,  H01L51/05

CPC classification number: H01L51/0036 ,  C07C49/697 ,  C07C2603/10 ,  C08G61/02 ,  C08G61/12 ,  C08G61/126 ,  C08G2261/1412 ,  C08G2261/148 ,  C08G2261/149 ,  C08G2261/18 ,  C08G2261/314 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/3242 ,  C08G2261/332 ,  C08G2261/3325 ,  C08G2261/342 ,  C08G2261/344 ,  C08G2261/364 ,  C08G2261/414 ,  C08G2261/92 ,  H01L51/0007 ,  H01L51/0043 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent; (Each of R1 R2 represents a hydrogen atom or a substituent; each of Ar1 and Ar2 independently represents a heteroarylene group or an arylene group; V1 represents a divalent linking group; m represents an integer of 0 to 6; cy represents a naphthalene ring or an anthracene ring; each of R3 and R4 represents a hydrogen atom or a substituent; each of Ar3 and Ar4 represents a heterocyclic aromatic ring or an aromatic ring; V2 represents a divalent linking group; p represents an integer of 0 to 6; n represents an integer of equal to or greater than 2; A is a divalent linking group represented by Formula (101′); each of RA1 to RA6 represents a hydrogen atom, a substituent, or a direct bond with Ar101 or Ar102 in Formula (101); and among the groups represented by RA1 to RA6, two different groups are direct bonds with Ar101 and Ar102 in Formula (101) respectively.)

公开(公告)号：US10590234B2

公开(公告)日：2020-03-17

申请号：US15497222

申请日：2017-04-26

Applicant: FUJIFILM CORPORATION

Inventor： Yuki Hirai ,  Kensuke Masui

IPC: C08G61/12 ,  H01L51/00 ,  H01L29/786 ,  H01L51/05

Abstract: Objects of the present invention are to provide an organic semiconductor element having excellent coating manufacturing process suitability, excellent carrier mobility, excellent heat resistance, and excellent flexibility of a semiconductor active layer and to provide an organic semiconductor composition that can form an organic semiconductor having excellent coating manufacturing process suitability, excellent carrier mobility, excellent heat resistance and excellent flexibility, an organic semiconductor film in which the composition is used, and a method of manufacturing an organic semiconductor element.The organic semiconductor element according to the present invention includes a compound represented by Formula 1 in a semiconductor active layer. In Formula 1, A is an aromatic ring selected from any one of aromatic rings represented by Formula 2 or 3, *'s represent bonding positions to two side chalcogenophene rings, Xa's represent chalcogen atoms, one of X1 and Y1 is a chalcogen atom, and one of X2 and Y2 is a chalcogen atom.

公开(公告)号：US09879034B2

公开(公告)日：2018-01-30

申请号：US15677538

申请日：2017-08-15

Applicant: FUJIFILM Corporation

Inventor： Yuki Hirai ,  Daisuke Sasaki ,  Yoshihiro Jimbo

IPC: C07D521/00 ,  C07F5/02

CPC classification number: C07F5/022 ,  C07D521/00 ,  C07F5/02 ,  C08K5/34 ,  C08L101/00 ,  G02B5/208

Abstract: To provide a near-infrared absorption composition which contains a squarylium compound having excellent solvent solubility, a cured film which uses the near-infrared absorption composition, a near-infrared cut filter, a solid-state imaging device, an infrared sensor, and a compound. A near-infrared absorption composition includes a compound represented by the following Formula (1) and a resin. R1 and R2 each independently represent “—S1-L1-T1” or the like, R3 and R4 each independently represent a hydrogen atom or an alkyl group, X1 and X2 each independently represent an oxygen atom or —N(R5)—, R5 represents a hydrogen atom or the like, Y1 to Y4 each independently represent a substituent, p and s each independently represent an integer of 0 to 3, and q and r each independently represent an integer of 0 to 2; and S1 represents an arylene group or the like, L1 represents an alkylene group or the like, and T1 represents an alkyl group or the like.

公开(公告)号：US09714253B2

公开(公告)日：2017-07-25

申请号：US14632741

申请日：2015-02-26

Applicant: FUJIFILM Corporation

Inventor： Tetsu Kitamura ,  Koji Takaku ,  Wataru Sotoyama ,  Yuki Hirai ,  Masaru Kinoshita ,  Yuuta Shigenoi

IPC: C07D307/91 ,  H01L51/00 ,  C07D493/04 ,  C07F7/08 ,  H01L51/05

CPC classification number: C07D493/04 ,  C07F7/0812 ,  C07F7/0838 ,  H01L51/0062 ,  H01L51/0065 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor having a semiconductor active layer containing a compound represented by the formula (1) has a high carrier mobility and a small change in the threshold voltage after repeated operation. R1 to R10 represent H or a substituent, provided that at least one of R1 to R4 and R6 to R9 represents a substituent represented by -L-R, L represents a specific divalent linking group, and R represents an alkyl group, an oligooxyethylene group, an oligosiloxane group, or a trialkylsilyl group.

公开(公告)号：US09705095B2

公开(公告)日：2017-07-11

申请号：US15199138

申请日：2016-06-30

Applicant: FUJIFILM Corporation

Inventor： Katsuyuki Youfu ,  Yuki Hirai ,  Kensuke Masui

IPC: H01L51/00 ,  C07C25/24 ,  C07C39/373 ,  C07D487/04 ,  C07D493/04 ,  C07D498/04 ,  C07C47/55 ,  C07D495/04 ,  C07D513/04 ,  C07F7/08 ,  C07C17/263 ,  H01L51/05

CPC classification number: H01L51/0074 ,  C07C17/263 ,  C07C25/24 ,  C07C39/373 ,  C07C47/55 ,  C07D487/04 ,  C07D493/04 ,  C07D495/04 ,  C07D498/04 ,  C07D513/04 ,  C07F7/081 ,  C09B57/00 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0566

Abstract: Provided are an organic transistor having high carrier mobility that contains a compound represented by the following formula in a semiconductor active layer; a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (each of X1 and X2 represents NR13, an O atom, or a S atom; A1 represents CR7 or a N atom; A2 represents CR8 or a N atom; R13 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an acyl group; each of R1 to R8 independently represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, R6, R7, or R8 is a substituent represented by -L-R; L represents a divalent linking group having a specific structure; and R represents an alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, an oligo-oxyethylene group in which a repetition number v of an oxyethylene unit is equal to or greater than 2, a siloxane group, an oligosiloxane group having two or more silicon atoms, or a trialkylsilyl group).

公开(公告)号：US12118819B2

公开(公告)日：2024-10-15

申请号：US18474861

申请日：2023-09-26

Applicant: FUJIFILM Corporation

Inventor： Ryoji Himeno ,  Shinichi Morishima ,  Yuki Hirai ,  Makoto Kamo ,  Megumi Sekiguchi

IPC: G06V40/13 ,  G02B5/20

CPC classification number: G06V40/1318 ,  G02B5/208

Abstract: A fingerprint recognition sensor having an excellent S/N ratio and capable of realizing thinning and an optical element including the fingerprint recognition sensor. The fingerprint recognition sensor includes a light-receiving element; and an optical element including a near infrared absorbing dichroic substance, in which a fingerprint reading surface is positioned on a side of the optical element opposite to the light-receiving element side. The optical element has an absorption axis with respect to near infrared light in an in-plane direction. When linearly polarized light of near infrared light orthogonal to the absorption axis is radiated from a normal direction of the optical element and from a direction inclined by 45° from the normal direction at an azimuthal angle orthogonal to the absorption axis, an absorbance during the radiation from the direction inclined by 45° from the normal direction is more than an absorbance during the radiation from the normal direction.