Invention Grant
- Patent Title: High-voltage power gating
- Patent Title (中): 高压电源门控
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Application No.: US13669204Application Date: 2012-11-05
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Publication No.: US09350165B2Publication Date: 2016-05-24
- Inventor: Christopher P. Mozak , Hong Yun Tan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H02H9/02
- IPC: H02H9/02 ; H02H9/04 ; H03K17/10 ; H03K17/22

Abstract:
Power gating circuits. A transistor stack is coupled between a voltage supply to provide a gated supply voltage. The supply voltage is greater than the maximum junction voltage of the individual transistors in the transistor stack. Termination circuitry for input/output (I/O) lines coupled to operate using the gated supply voltage. The termination circuitry comprising at least a resistive element coupled between an I/O interface and a termination voltage supply.
Public/Granted literature
- US20140126090A1 HIGH-VOLTAGE POWER GATING Public/Granted day:2014-05-08
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