Invention Grant
- Patent Title: Two-step deposition with improved selectivity
- Patent Title (中): 两步沉积,提高了选择性
-
Application No.: US14225020Application Date: 2014-03-25
-
Publication No.: US09353444B2Publication Date: 2016-05-31
- Inventor: Artur Kolics , Praveen Nalla , Seshasayee Varadarajan
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: C23C18/18
- IPC: C23C18/18 ; H01L21/768 ; C23C18/16 ; C23C18/31 ; C23C18/50

Abstract:
A method for providing an electroless plating over at least one copper containing layer is provided. Surfaces of the at least one copper containing layer are sealed by selectively depositing a sealing layer of catalytically active metal on the at least one copper containing layer. The sealing layer is exposed to an electroless deposition bath that is more reactive to the catalytically active metal than to the at least one copper containing layer to provide an electroless deposition on the sealing layer.
Public/Granted literature
- US20150275374A1 TWO-STEP DEPOSITION WITH IMPROVED SELECTIVITY Public/Granted day:2015-10-01
Information query
IPC分类: