Invention Grant
- Patent Title: Substrate manufacturing method and substrate manufacturing apparatus
- Patent Title (中): 基板制造方法和基板制造装置
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Application No.: US14678491Application Date: 2015-04-03
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Publication No.: US09355857B2Publication Date: 2016-05-31
- Inventor: Kangmin Jeon , Kyung-Sun Kim , Dougyong Sung , Tae-Hwa Kim , Heungsik Park , Jung Min Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0093323 20140723
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/3065 ; H01L21/02 ; H01L21/311 ; H01L21/67 ; H01J37/32
Abstract:
Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.
Public/Granted literature
- US20160027652A1 SUBSTRATE MANUFACTURING METHOD AND SUBSTRATE MANUFACTURING APPARATUS Public/Granted day:2016-01-28
Information query
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