Invention Grant
- Patent Title: PMOS transistor with improved mobility of the carriers
- Patent Title (中): 具有改善载流子迁移率的PMOS晶体管
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Application No.: US14640705Application Date: 2015-03-06
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Publication No.: US09356090B2Publication Date: 2016-05-31
- Inventor: Vincent Fiori , Sebastien Gallois-Garreignot , Denis Rideau , Clement Tavernier
- Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
- Applicant Address: FR Crolles FR Montrouge
- Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- Current Assignee Address: FR Crolles FR Montrouge
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1453723 20140425
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/78

Abstract:
A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.
Public/Granted literature
- US20150311277A1 PMOS TRANSISTOR WITH IMPROVED MOBILITY OF THE CARRIERS Public/Granted day:2015-10-29
Information query
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