Invention Grant
US09356090B2 PMOS transistor with improved mobility of the carriers 有权
具有改善载流子迁移率的PMOS晶体管

PMOS transistor with improved mobility of the carriers
Abstract:
A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.
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