公开(公告)号：US09356090B2

公开(公告)日：2016-05-31

申请号：US14640705

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Vincent Fiori ,  Sebastien Gallois-Garreignot ,  Denis Rideau ,  Clement Tavernier

IPC: H01L29/04 ,  H01L29/78

CPC classification number: H01L29/045 ,  H01L23/522 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

Abstract translation: 衬底包括沿结晶面（100）取向并被绝缘区域限制的有源区。 MOS晶体管包括沿着<110>型晶体方向纵向取向的通道。 由金属形成并形成为T形状的基本图案是电惰性的，并且位于与通道的横向端部相邻的绝缘区域的区域上。 T形基本图案的水平分支基本上平行于通道的纵向定向。

公开(公告)号：US20150311277A1

公开(公告)日：2015-10-29

申请号：US14640705

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Vincent Fiori ,  Sebastien Gallois-Garreignot ,  Denis Rideau ,  Clement Tavernier

IPC: H01L29/04 ,  H01L29/10

CPC classification number: H01L29/045 ,  H01L23/522 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

Abstract translation: 衬底包括沿结晶面（100）取向并被绝缘区域限制的有源区。 MOS晶体管包括沿着<110>型晶体方向纵向取向的通道。 由金属形成并形成为T形状的基本图案是电惰性的，并且位于与通道的横向端部相邻的绝缘区域的区域上。 T形基本图案的水平分支基本上平行于通道的纵向定向。