公开(公告)号：US09638589B2

公开(公告)日：2017-05-02

申请号：US14311497

申请日：2014-06-23

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Vincent Fiori ,  Pierre Bar ,  Sébastien Gallois-Garreignot

IPC: G01L1/00 ,  G01L1/20 ,  G01L25/00 ,  G01B7/16 ,  G01L1/22 ,  G01L5/16 ,  H01L21/66

CPC classification number: G01L1/20 ,  G01B7/18 ,  G01L1/2287 ,  G01L5/161 ,  G01L25/00 ,  H01L22/34

Abstract: A method and corresponding system are provided for determining a three-dimensional stress field of an object having a flat surface. At least four flat resistors are placed on the flat surface of the object, with at least one of the resistors having a geometry different from that of the others. A variation of resistance of the resistors is measured. The three-dimensional stress field is determined from a system of equations involving the stress field, values of variations of the measured resistive values and sensitivity parameters of the resistors.

公开(公告)号：US09449896B2

公开(公告)日：2016-09-20

申请号：US14590404

申请日：2015-01-06

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Sandrine Lhostis ,  Olga Kokshagina ,  Yann Beilliard ,  Vincent Fiori

IPC: H01L23/31 ,  H01L23/473 ,  H01L21/56 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18

CPC classification number: H01L23/473 ,  H01L21/56 ,  H01L23/31 ,  H01L23/3121 ,  H01L23/3135 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/16195 ,  H01L2924/167 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/00

Abstract: A device includes a support, a three-dimensional integrated structure above the support, and a lateral encapsulation region arranged around the structure. The lateral encapsulation region includes first channels configured to make it possible to circulate a cooling fluid.

Abstract translation: 一种装置包括支撑件，支撑件上方的三维集成结构以及围绕结构设置的侧向封装区域。 横向封装区域包括被配置为使得循环冷却流体成为可能的第一通道。

公开(公告)号：US20150311277A1

公开(公告)日：2015-10-29

申请号：US14640705

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Vincent Fiori ,  Sebastien Gallois-Garreignot ,  Denis Rideau ,  Clement Tavernier

IPC: H01L29/04 ,  H01L29/10

CPC classification number: H01L29/045 ,  H01L23/522 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

Abstract translation: 衬底包括沿结晶面（100）取向并被绝缘区域限制的有源区。 MOS晶体管包括沿着<110>型晶体方向纵向取向的通道。 由金属形成并形成为T形状的基本图案是电惰性的，并且位于与通道的横向端部相邻的绝缘区域的区域上。 T形基本图案的水平分支基本上平行于通道的纵向定向。

公开(公告)号：US09648724B2

公开(公告)日：2017-05-09

申请号：US14956512

申请日：2015-12-02

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS SA

Inventor： Nicolas Hotellier ,  François Guyader ,  Vincent Fiori ,  Richard Fournel ,  Frédéric Gianesello

IPC: H05K1/02 ,  H05K1/11 ,  H05K1/18 ,  H05K3/00 ,  H01L21/762 ,  H01L21/764

CPC classification number: H05K1/0216 ,  H01L21/762 ,  H01L21/7624 ,  H01L21/764 ,  H01L24/03 ,  H01L24/05 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2924/00014 ,  H05K1/111 ,  H05K1/181 ,  H05K3/0011 ,  H01L2224/05599

Abstract: An electronic device has a rear plate that includes a substrate rear layer, a substrate front layer and a dielectric intermediate layer between the substrate rear and front layers. An electronic structure is on the substrate front layer and includes electronic components and electrical connections. The substrate rear layer includes a solid local region and a hollowed-out local region. The hollowed-out local region extends over all of the substrate rear layer. The substrate rear layer does not cover at least one local zone of the dielectric intermediate layer corresponding to the hollowed-out local region.

公开(公告)号：US09356090B2

公开(公告)日：2016-05-31

申请号：US14640705

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Vincent Fiori ,  Sebastien Gallois-Garreignot ,  Denis Rideau ,  Clement Tavernier

IPC: H01L29/04 ,  H01L29/78

CPC classification number: H01L29/045 ,  H01L23/522 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

Abstract translation: 衬底包括沿结晶面（100）取向并被绝缘区域限制的有源区。 MOS晶体管包括沿着<110>型晶体方向纵向取向的通道。 由金属形成并形成为T形状的基本图案是电惰性的，并且位于与通道的横向端部相邻的绝缘区域的区域上。 T形基本图案的水平分支基本上平行于通道的纵向定向。

公开(公告)号：US20150200151A1

公开(公告)日：2015-07-16

申请号：US14590404

申请日：2015-01-06

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Sandrine LHOSTIS ,  Olga Kokshagina ,  Yann Beilliard ,  Vincent Fiori

IPC: H01L23/473 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/473 ,  H01L21/56 ,  H01L23/31 ,  H01L23/3121 ,  H01L23/3135 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/16195 ,  H01L2924/167 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/00

Abstract: A device includes a support, a three-dimensional integrated structure above the support, and a lateral encapsulation region arranged around the structure. The lateral encapsulation region includes first channels configured to make it possible to circulate a cooling fluid.

Abstract translation: 一种装置包括支撑件，支撑件上方的三维集成结构以及围绕结构设置的侧向封装区域。 横向封装区域包括被配置为使得循环冷却流体成为可能的第一通道。

公开(公告)号：US09099603B2

公开(公告)日：2015-08-04

申请号：US13858389

申请日：2013-04-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Vincent Fiori

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/02 ,  H01L27/146

CPC classification number: H01L31/18 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a layer on the first surface; defining trenches in the layer, the trenches forming a pattern in the layer; and installing, on a hollow curved substrate, the obtained device on the free surface side of the layer, the pattern being selected according to the shape of the support surface.

Abstract translation: 一种用于制造图像传感器的方法，包括以下步骤：在半导体衬底的第一表面上形成图像传感器的元件结构; 在第一个表面上安装一层; 在层中限定沟槽，沟槽在层中形成图案; 并且将所获得的装置安装在空心弯曲基板上的层的自由表面侧上，根据支撑表面的形状来选择图案。

公开(公告)号：US20150022987A1

公开(公告)日：2015-01-22

申请号：US14330347

申请日：2014-07-14

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Grenoble 2) SAS

Inventor： Sebastien Gallois-Garreignot ,  Jérôme Lopez ,  Gil Provent ,  Caroline Moutin ,  Vincent Fiori

IPC: H05K7/02 ,  H05K1/11

CPC classification number: H05K7/02 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/13006 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81815 ,  H05K1/111 ,  H05K2201/10439 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: An electronic device includes an integrated circuit chip with an insulating passivation layer. An opening in the passivation layer uncovers a first region of an electrical contact. An electrical connection pad is formed to fill the opening by covering the first region and extend in projection in such a way as to cover a second region situated on the passivation layer surrounding the opening. The periphery of at least one of the first and second regions has an elongate or oblong shape. Centers of the opening and the pad are aligned with each other.

Abstract translation: 电子设备包括具有绝缘钝化层的集成电路芯片。 钝化层中的开口露出电接触的第一区域。 形成电连接垫以通过覆盖第一区域而填充开口，并且以突出方式延伸以覆盖位于围绕开口的钝化层上的第二区域。 第一和第二区域中的至少一个区域的周边具有细长或长方形形状。 开口和垫的中心彼此对准。

公开(公告)号：US20130270662A1

公开(公告)日：2013-10-17

申请号：US13858389

申请日：2013-04-08

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： François Roy ,  Vincent Fiori

IPC: H01L31/18 ,  H01L31/02

CPC classification number: H01L31/18 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a handle on the first surface; defining trenches in the handle, the trenches forming a pattern in the handle; and installing, on a hollow curved substrate, the obtained device on the free surface side of the handle, the pattern being selected according to the shape of the support surface.

Abstract translation: 一种用于制造图像传感器的方法，包括以下步骤：在半导体衬底的第一表面上形成图像传感器的元件结构; 在第一个表面上安装手柄; 在手柄中限定沟槽，沟槽在手柄中形成图案; 并且在空心弯曲基板上将所获得的装置安装在手柄的自由表面侧上，根据支撑表面的形状选择图案。