发明授权
- 专利标题: Charged particle beam device and sample preparation method
- 专利标题(中): 带电粒子束装置和样品制备方法
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申请号: US14434687申请日: 2013-10-09
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公开(公告)号: US09362088B2公开(公告)日: 2016-06-07
- 发明人: Takahiro Sato , Akinari Morikawa , Isamu Sekihara
- 申请人: Hitachi High-Technologies Corporation
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2012-227596 20121015
- 国际申请: PCT/JP2013/077453 WO 20131009
- 国际公布: WO2014/061524 WO 20140424
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; G01N1/28 ; H01J37/28 ; H01J37/30 ; H01J37/31
摘要:
Provided is a charged particle beam device provided with: a charged particle source; an objective lens for focusing a charged particle beam emitted from the charged particle source onto a sample; a detector for detecting a secondary charged particle emitted from the sample; a probe capable of coming into contact with the sample; a gas nozzle for emitting conductive gas to the sample; and a control unit for controlling the drive of the probe and gas emission from the gas nozzle, wherein before bringing the probe into contact with the sample after applying the charged particle beam to the sample to machine the sample, the control unit emits gas toward a machining position from the gas nozzle and applies the charged particle beam to form a conductive film on a machining portion of the sample, and the charged particle beam device is provided with a contact detection unit for determining that the conductive film formed on the machining portion and the probe have come into contact with each other.
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