发明授权
- 专利标题： Structure and method for integrated devices on different substartes with interfacial engineering
- 专利标题（中）： 用于界面工程的不同子系统上集成器件的结构和方法
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申请号： US13725330申请日： 2012-12-21
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公开(公告)号： US09362123B2公开(公告)日： 2016-06-07
- 发明人: Liang-Gi Yao , I-Ming Chang , Yasutoshi Okuno , Chih-Hao Chang , Shou Zen Chang , Clement Hsingjen Wann
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L29/78 ; H01L27/12 ; H01L21/28 ; H01L29/66 ; H01L29/10 ; H01L21/02 ; H01L29/51
摘要：
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first semiconductor material and a first reactivity; and a low reactivity capping layer of disposed on the semiconductor substrate, wherein the low reactivity capping layer includes a second semiconductor material and a second reactivity less than the first reactivity, the low reactivity capping layer includes silicon germanium Si1-xGex and x is less than about 30%.
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