Invention Grant
- Patent Title: Semiconductor devices with different dielectric thicknesses
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Application No.: US13893026Application Date: 2013-05-13
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Publication No.: US09362280B2Publication Date: 2016-06-07
- Inventor: Gauri V. Karve , Mark D. Hall , Srikanth B. Samavedam
- Applicant: Gauri V. Karve , Mark D. Hall , Srikanth B. Samavedam
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/092 ; H01L21/8238 ; H01L29/10
Abstract:
An integrated circuit with devices having dielectric layers with different thicknesses. The dielectric layers include a high-k dielectric and some of the dielectric layers include an oxide layer that is formed from an oxidation process. Each device includes a layer including germanium or carbon located underneath the electrode stack of the device. A silicon cap layers is located over the layer including germanium or carbon.
Public/Granted literature
- US20130249015A1 SEMICONDUCTOR DEVICES WITH DIFFERENT DIELECTRIC THICKNESSES Public/Granted day:2013-09-26
Information query
IPC分类:
