Invention Grant
- Patent Title: Oxide thin film transistor, display device, and method for manufacturing array substrate
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Application No.: US14416227Application Date: 2014-04-16
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Publication No.: US09362414B2Publication Date: 2016-06-07
- Inventor: Ke Wang , Seongyeol Yoo , Ce Ning , Wei Yang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201310727116 20131225
- International Application: PCT/CN2014/075507 WO 20140416
- International Announcement: WO2015/096307 WO 20150702
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/4763 ; H01L29/51 ; H01L29/49 ; H01L29/66 ; H01L29/423 ; H01L29/417
Abstract:
Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A source electrode and a drain electrode are located below an oxide active layer pattern, and a gate electrode is located below the source electrode and the drain electrode, and the gate insulating layer is located between the gate electrode and the source electrode/the drain electrode.
Public/Granted literature
- US09502577B2 Oxide thin film transistor, display device, and method for manufacturing array substrate Public/Granted day:2016-11-22
Information query
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