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公开(公告)号：US12041825B2
公开(公告)日：2024-07-16
申请号：US17429935
申请日：2020-11-13
发明人： Jiayu He , Ce Ning , Zhengliang Li , Hehe Hu , Jie Huang , Nianqi Yao , Xue Liu
IPC分类号： H10K59/13 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/12
CPC分类号： H10K59/13 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/1201
摘要： An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.
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公开(公告)号：US11798959B2
公开(公告)日：2023-10-24
申请号：US16965495
申请日：2019-07-22
发明人： Wei Yang , Guangcai Yuan , Ce Ning , Xinhong Lu , Tianmin Zhou , Lizhong Wang
CPC分类号： H01L27/1288 , H01L27/1248
摘要： Provided are an array substrate and a manufacturing method thereof, the manufacturing method includes: forming a first active layer on a base substrate; forming a second active layer; forming a second gate on the second active layer; forming a first insulating layer covering the first active layer on the second gate; patterning the first insulating layer to form first via holes at both sides of the second gate to expose the second active layer; depositing a first metal layer in the first via holes and on the first insulating layer; patterning the first metal layer, removing a part of the first metal layer above the first active layer to expose the first insulating layer; etching the first insulating layer using the patterned first metal layer as a mask, forming second via holes above the first active layer to expose the first active layer; cleaning the exposed first active layer.
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公开(公告)号：US20230317740A1
公开(公告)日：2023-10-05
申请号：US18021090
申请日：2022-03-04
发明人： Lizhong Wang , Ce Ning , Yunping Di , Binbin Tong , Rui Huang , Tianmin Zhou , Wei Yang , Liping Lei
IPC分类号： H01L27/12 , G02F1/1362 , G02F1/1368
CPC分类号： H01L27/1251 , H01L27/1225 , H01L27/124 , G02F1/136209 , G02F1/136286 , G02F1/1368 , H01L27/127
摘要： The present application provides an array substrate, a manufacturing method for the same, and a display panel. The array substrate includes a display area and a non-display area connected to the display area, and the display area includes a plurality of sub-pixels arranged in an array. The non-display area includes at least one polysilicon transistor, each of the sub-pixels includes an oxide transistor and a pixel electrode. A gate of the oxide transistor as well as a first electrode and a second electrode of the polysilicon transistor are arranged in a same layer; an active layer of the oxide transistor and the pixel electrode are arranged in a same layer, and are in contact with each other. The active layer of the oxide transistor includes an oxide semiconductor material, and the pixel electrode includes an oxide conductor material.
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公开(公告)号：US20220344480A1
公开(公告)日：2022-10-27
申请号：US17755380
申请日：2021-05-19
发明人： Lizhong Wang , Ce Ning , Hehe Hu , Tianmin Zhou , Jipeng Song
IPC分类号： H01L29/417 , H01L29/786
摘要： The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.
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公开(公告)号：US11219899B2
公开(公告)日：2022-01-11
申请号：US16475035
申请日：2018-08-01
发明人： Xiaochen Ma , Guangcai Yuan , Ce Ning , Song Liu
IPC分类号： B60L3/00 , G01N27/414 , B01L3/00
摘要： The present application provides a micro-channel structure. The micro-channel structure includes a base substrate; a rail layer on the base substrate and including a first rail and a second rail spaced apart from each other; and a wall layer on a side of the rail layer distal to the base substrate, and including a first wall and a second wall at least partially spaced apart from each other, thereby forming a micro-channel between the first wall and the second wall. The micro-channel has an extension direction along a plane substantially parallel to a main surface of the base substrate, the extension direction being substantially parallel to extension directions of the first rail and the second rail along the plane substantially parallel to the main surface of the base substrate.
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公开(公告)号：US10889504B2
公开(公告)日：2021-01-12
申请号：US16344000
申请日：2018-09-17
发明人： Wenlin Zhang , Ce Ning , Hehe Hu , Zhengliang Li
IPC分类号： C01G15/00 , H01L29/786
摘要： An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.
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公开(公告)号：US20200185535A1
公开(公告)日：2020-06-11
申请号：US16528622
申请日：2019-08-01
发明人： Feng Guan , Guangcai Yuan , Zhi Wang , Chen Xu , Qi Yao , Zhanfeng Cao , Ce Ning , Woobong Lee , Lei Chen
IPC分类号： H01L29/786 , H01L27/12
摘要： An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.
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公开(公告)号：US10431694B2
公开(公告)日：2019-10-01
申请号：US16165316
申请日：2018-10-19
IPC分类号： H01L21/425 , H01L29/786 , G02F1/1362 , H01L21/02 , H01L21/027 , H01L21/4763 , H01L27/12 , H01L29/24 , H01L29/45 , H01L29/66 , G02F1/1368
摘要： The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a channel region, a source electrode contact region, and a drain electrode contact region; an etch stop layer on a side of the channel region distal to the base substrate covering the channel region; a source electrode on a side of the source electrode contact region distal to the base substrate; and a drain electrode on a side of the drain electrode contact region distal to the base substrate. A thickness of the active layer in the source electrode contact region and the drain electrode contact region is substantially the same as a combined thickness of the active layer in the channel region and the etch stop layer.
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公开(公告)号：US10242886B2
公开(公告)日：2019-03-26
申请号：US15569728
申请日：2017-04-12
IPC分类号： H01L21/477 , H01L21/77 , H01L27/12 , H01L29/66 , H01L29/786
摘要： A method for fabricating an array substrate is disclosed. The method comprises: forming a first oxide semiconductor active layer of a first TFT in a GOA area of a substrate; performing a first annealing process on the first oxide semiconductor active layer at a first temperature; forming a first insulating layer which covers the first oxide semiconductor active layer; performing a second annealing process on the first oxide semiconductor active layer at a second temperature, wherein the second temperature is lower than the first temperature. This improves a forward bias stability of the first TFT and increases the device lifetime.
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公开(公告)号：US10192996B2
公开(公告)日：2019-01-29
申请号：US15744954
申请日：2017-03-06
IPC分类号： H01L29/78 , H01L29/786 , G02F1/1362 , H01L21/02 , H01L21/027 , H01L21/425 , H01L21/4763 , H01L27/12 , H01L29/24 , H01L29/45 , H01L29/66 , G02F1/1368
摘要： The present application discloses a thin film transistor including a base substrate; an active layer on the base substrate having a channel region, a source electrode contact region, and a drain electrode contact region; an etch stop layer on a side of the channel region distal to the base substrate covering the channel region; a source electrode on a side of the source electrode contact region distal to the base substrate; and a drain electrode on a side of the drain electrode contact region distal to the base substrate. A thickness of the active layer in the source electrode contact region and the drain electrode contact region is substantially the same as a combined thickness of the active layer in the channel region and the etch stop layer.
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