Invention Grant
- Patent Title: Magnetic stack including TiN-X intermediate layer
- Patent Title (中): 磁性堆叠包括TiN-X中间层
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Application No.: US14035931Application Date: 2013-09-24
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Publication No.: US09368142B2Publication Date: 2016-06-14
- Inventor: Jingsheng Chen , Huihui Li , Ganping Ju , Yingguo Peng
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G11B5/66
- IPC: G11B5/66 ; G11B5/738 ; C23C14/14 ; C23C14/08 ; C23C14/06 ; G11B5/73 ; G11B5/65 ; G11B5/667
Abstract:
A magnetic stack includes a substrate, a magnetic recording layer, and a TiN—X layer disposed between the substrate and the magnetic recording layer. In the TiN—X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, and Al2O3.
Public/Granted literature
- US20140093748A1 MAGNETIC STACK INCLUDING TiN-X INTERMEDIATE LAYER Public/Granted day:2014-04-03
Information query
IPC分类:
