摘要:
A magnetic stack includes a substrate, a magnetic recording layer, and a TiN—X layer disposed between the substrate and the magnetic recording layer. In the TiN—X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, and Al2O3.
摘要翻译:磁性堆叠包括基板,磁记录层和设置在基板和磁记录层之间的TiN-X层。 在TiN-X层中,X是包含MgO,TiO,TiO 2,ZrN,ZrO,ZrO 2,HfN,HfO,AlN和Al 2 O 3中的至少一种的掺杂剂。
摘要:
A magnetic stack includes a substrate, a magnetic recording layer, and a TiN—X layer disposed between the substrate and the magnetic recording layer. In the TiN—X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, AlN, and Al2O3.
摘要翻译:磁性堆叠包括基板,磁记录层和设置在基板和磁记录层之间的TiN-X层。 在TiN-X层中,X是包含MgO,TiO,TiO 2,ZrN,ZrO,ZrO 2,HfN,HfO,AlN和Al 2 O 3中的至少一种的掺杂剂。
摘要:
A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.
摘要:
A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.