A method of sensing multi-bit data stored in a resistive memory cell includes; determining a resistive value range for the memory cell by performing a first read operation using a first read voltage and a first reference current, determining whether the multi-bit data stored in the resistive memory cell has a first program state, upon determining that the multi-bit data stored does not have the first program state, selecting a second read voltage different from the first read voltage in response to the resistive value range of the resistive memory cell, and using the second read voltage to again determine whether the multi-bit data stored in the resistive memory cell has the first program state.