发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US13131427申请日: 2010-02-23
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公开(公告)号: US09368374B2公开(公告)日: 2016-06-14
- 发明人: Kazunori Hamazaki , Takashi Matsumura , Daisuke Sato , Yasuhiro Suga
- 申请人: Kazunori Hamazaki , Takashi Matsumura , Daisuke Sato , Yasuhiro Suga
- 申请人地址: JP Tokyo
- 专利权人: Dexerials Corporation
- 当前专利权人: Dexerials Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Kenja IP Law PC
- 优先权: JP2009-045164 20090227
- 国际申请: PCT/JP2010/052772 WO 20100223
- 国际公布: WO2010/098324 WO 20100902
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/56 ; H01L23/00
摘要:
A method of manufacturing a semiconductor device is provided. The method includes placing a semiconductor chip by flip-chip mounting on a substrate by using an insulating resin adhesive film (NCF) and preventing overflow of the NCF and the intervention of an insulating resin or an inorganic filler between a bump and an electrode during hot pressing. The method also includes temporarily affixing an NCF of a size that is substantially 60 to 100% the area of a region enclosed with a plurality of bumps of the semiconductor chip arranged in a peripheral alignment, and having a minimum melt viscosity of 2×102 to 1×105 Pa·s, to the region enclosed with a plurality of electrodes of the substrate corresponding to the bumps, and aligning the semiconductor chip and the substrate with each other such that the bumps and the electrodes corresponding thereto are opposed to each other.
公开/授权文献
- US20110237028A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2011-09-29
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