Invention Grant
US09368608B1 Heterojunction bipolar transistor with improved performance and breakdown voltage
有权
具有改进性能和击穿电压的异质结双极晶体管
- Patent Title: Heterojunction bipolar transistor with improved performance and breakdown voltage
- Patent Title (中): 具有改进性能和击穿电压的异质结双极晶体管
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Application No.: US14749809Application Date: 2015-06-25
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Publication No.: US09368608B1Publication Date: 2016-06-14
- Inventor: Renata Camillo-Castillo , Vibhor Jain , Vikas K. Kaushal , Marwan H. Khater
- Applicant: GLOBALFOUNDARIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony J. Canale
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/66 ; H01L29/06 ; H01L29/737 ; H01L21/764 ; H01L21/265 ; H01L29/08
Abstract:
Fabrication methods for a device structure and device structures. A trench isolation region is formed that bounds an active device region of a semiconductor substrate. A first semiconductor layer is formed on the active device region and on the trench isolation region. A first airgap is formed between the first semiconductor layer and the active device region. A second airgap is formed between the first semiconductor layer and the trench isolation region. The first airgap extends into the active device region such that the height of the first airgap is greater than the height of the second airgap.
Information query
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