公开(公告)号：US09368608B1

公开(公告)日：2016-06-14

申请号：US14749809

申请日：2015-06-25

Applicant: GLOBALFOUNDARIES INC.

Inventor： Renata Camillo-Castillo ,  Vibhor Jain ,  Vikas K. Kaushal ,  Marwan H. Khater

IPC: H01L29/732 ,  H01L29/66 ,  H01L29/06 ,  H01L29/737 ,  H01L21/764 ,  H01L21/265 ,  H01L29/08

CPC classification number: H01L29/7371 ,  H01L21/26586 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/66287 ,  H01L29/732

Abstract: Fabrication methods for a device structure and device structures. A trench isolation region is formed that bounds an active device region of a semiconductor substrate. A first semiconductor layer is formed on the active device region and on the trench isolation region. A first airgap is formed between the first semiconductor layer and the active device region. A second airgap is formed between the first semiconductor layer and the trench isolation region. The first airgap extends into the active device region such that the height of the first airgap is greater than the height of the second airgap.

Abstract translation: 器件结构和器件结构的制造方法。 形成界定半导体衬底的有源器件区的沟槽隔离区。 在有源器件区域和沟槽隔离区域上形成第一半导体层。 在第一半导体层和有源器件区之间形成第一气隙。 在第一半导体层和沟槽隔离区之间形成第二气隙。 第一气隙延伸到有源装置区域中，使得第一气隙的高度大于第二气隙的高度。