Invention Grant
- Patent Title: Voltage doubler and nonvolating memory device having the same
- Patent Title (中): 具有相同的倍压器和非挥发性存储器件
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Application No.: US14637670Application Date: 2015-03-04
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Publication No.: US09369115B2Publication Date: 2016-06-14
- Inventor: Vivek Venkata Kalluru , Youngsun Min , Hichoon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0041163 20140407
- Main IPC: G11C16/00
- IPC: G11C16/00 ; H03K5/02 ; G11C16/04 ; G11C16/08 ; G11C16/26 ; G11C16/32

Abstract:
A voltage doubler includes first to fourth transistors, a first capacitor connected between a first node and a first clock terminal configured to receive a first clock signal. A second capacitor is connected between a second node and a second clock terminal configured to receive an inverted first clock signal. A first gate control unit is configured to control the first and second transistors using the first clock signal and the inverted first clock signal, and a second gate control unit is configured to control the third and fourth transistors using a second clock signal and an inverted second clock signal. A load capacitor is connected between the output terminal and a ground terminal.
Public/Granted literature
- US20150288353A1 VOLTAGE DOUBLER AND NONVOLATING MEMORY DEVICE HAVING THE SAME Public/Granted day:2015-10-08
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